Terahertz generation measurements of multilayered GeTe-Sb2Te3 phase change materials

被引：8

作者：

Makino, Kotaro ^{[1
]}

Kato, Kosaku ^{[2
]}

Saito, Yuta ^{[1
]}

Fons, Paul ^{[1
]}

Kolobov, Alexander, V ^{[1
,3
]}

Tominaga, Junji ^{[1
]}

Nakano, Takashi ^{[1
]}

Nakajima, Makoto ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058565, Japan

[2] Osaka Univ, Inst Laser Engn, Suita, Osaka 5650871, Japan

[3] Herzen State Pedag Univ, Fac Phys, Dept Phys Elect, St Petersburg 191186, Russia

来源：

OPTICS LETTERS | 2019年 / 44卷 / 06期

基金：

日本学术振兴会;

关键词：

DER-WAALS GAPS; OPTICAL RECTIFICATION; RECONFIGURATION; RADIATION; EMISSION;

D O I：

10.1364/OL.44.001355

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Multilayered structures of GeTe and Sb2Te3 phase change material, also referred to as interfacial phase change memory (iPCM), provide superior performance for nonvolatile electrical memory technology in which the atomically controlled structure plays an important role in memory operation. Here, we report on terahertz (THz) wave generation measurements. Three- and 20-layer iPCM samples were irradiated with a femtosecond laser, and the generated THz radiation was observed. The emitted THz pulse was found to be always p polarized independent of the polarization of the excitation pulse. Based on the polarization dependence as well as the flip of the THz field from photoexcited Sb2Te3 and Bi2Te3, the THz emission process can be attributed to the surge current flow due to the built-in surface depletion layer formed in p-type semiconducting iPCM materials. (C) 2019 Optical Society of America

引用

页码：1355 / 1358

页数：4

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