Surfactant induced growth of thin gallium films on an insulating (sapphire) substrate

被引：3
|
作者：
Lewowski, T
Otop, H
Wieczorek, P
机构：
[1] Institute of Experimental Physics, University of Wroclaw
来源：
APPLIED SURFACE SCIENCE | 1996年 / 103卷 / 01期
关键词：
D O I：
10.1016/0169-4332(95)00605-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
It was shown that Sb may be used as a surfactant to modify the growth of thin Ga films on a sapphire substrate. A continuous film can be grown at a small thickness, whereas without the surfactant the film grows in the form of highly dispersed isolated droplets even if the film thickness reaches more than 120 nm.
引用
收藏
页码：35 / 38
页数：4
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