Surfactant induced growth of thin gallium films on an insulating (sapphire) substrate

被引：3

作者：

Lewowski, T

Otop, H

Wieczorek, P

机构：

[1] Institute of Experimental Physics, University of Wroclaw

来源：

APPLIED SURFACE SCIENCE | 1996年 / 103卷 / 01期

关键词：

D O I：

10.1016/0169-4332(95)00605-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It was shown that Sb may be used as a surfactant to modify the growth of thin Ga films on a sapphire substrate. A continuous film can be grown at a small thickness, whereas without the surfactant the film grows in the form of highly dispersed isolated droplets even if the film thickness reaches more than 120 nm.

引用

页码：35 / 38

页数：4

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