n-Type Conjugated Polymers Based on an Indandione-Terminated Quinoidal Building Block

被引:0
|
作者
Du, Tian [1 ,2 ]
Liu, Yingying [1 ,2 ]
Wang, Cheng [1 ,2 ]
Deng, Yunfeng [1 ,2 ,3 ]
Geng, Yanhou [1 ,2 ,3 ]
机构
[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
[3] Joint Sch Natl Univ Singapore & Tianjin Univ, Fuzhou 350207, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
FIELD-EFFECT TRANSISTORS; DONOR-ACCEPTOR POLYMERS; HIGH ELECTRON-AFFINITY; ORGANIC SEMICONDUCTORS; RECENT PROGRESS; TRANSPORT; MOBILITY; DESIGN; DERIVATIVES; CHANNEL;
D O I
10.1021/acs.macromol.2c010295975
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Conjugated polymers (CPs) with deep LUMO energy levels (ELUMOs) are essential for developing n-type organic electronics. However, few approaches can markedly lower the ELUMOs of CPs. Herein, this issue is addressed by the introduction of a quinoidal building block into the polymer chain. Two CPs, PIQ-A and PIQ-O, are synthesized based on an indandione-terminated quinoidal unit, with alkyl or oligo(ethylene glycol) side chains on the comonomer, respectively. The CPs show ultralow ELUMOs of ca. -4.30 eV, which is lower by 0.75 eV compared to the analogous polymer with aromatic conjugated structure. The deep LUMO energy levels endow the CPs with unipolar n-type transport behavior in organic thin-film transistors and efficient n-type doping in organic thermoelectrics, with doped PIQ-O showing an optimized electrical conductivity of 0.43 S cm(-1) and a power factor of 4.24 mu W m(-1) K-2. Importantly, the electrical conductivity of doped polymer thin films (similar to 50 nm) barely changes after a 7 day exposure to air, and the doped PIQ-O film shows an electrical conductivity of 0.39 S cm(-1) even after a 15 day exposure to air. This work provides a new approach to develop CPs with ultralow LUMO energy levels, toward high-performance and potentially air -stable n-type organic electronics.
引用
收藏
页码:5975 / 5984
页数:10
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