Generalised Butterworth-Van Dyke equivalent circuit for thin-film bulk acoustic resonator

被引：30
|
作者：
Jin, H. [1 ]
Dong, S. R. [1 ]
Luo, J. K. [1 ,2 ]
Milne, W. I. [3 ,4 ]
机构：
[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
[2] Univ Bolton, Inst Mat Res & Innovat, Bolton BL3 5AB, England
[3] Univ Cambridge, Elect Engn Div, Cambridge CB3 0FA, England
[4] Kyung Hee Univ, Dept Informat Sci Display, Seoul 130701, South Korea
来源：
ELECTRONICS LETTERS | 2011年 / 47卷 / 07期
基金：
中国国家自然科学基金; 英国工程与自然科学研究理事会;
关键词：
D O I：
10.1049/el.2011.0343
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A generalised Butterworth-Van Dyke (GBVD) equivalent circuit model for a thin-film bulk acoustic resonator (FBAR), especially for a FBAR with a high electromechanical coupling constant (k(t)(2)), is presented. The derivation starts from the ideal impedance formula for the FBAR, then acoustic loss, dielectric loss, and electrode electrical loss are introduced step by step. Results show that the widely used modified Butterworth-Van Dyke (MBVD) model is a special case of a GBVD model using a low k(t)(2) approximation.
引用
收藏
页码：424 / 425
页数：2
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