Generalised Butterworth-Van Dyke equivalent circuit for thin-film bulk acoustic resonator

被引：30
|
作者：
Jin, H. [1 ]
Dong, S. R. [1 ]
Luo, J. K. [1 ,2 ]
Milne, W. I. [3 ,4 ]
机构：
[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
[2] Univ Bolton, Inst Mat Res & Innovat, Bolton BL3 5AB, England
[3] Univ Cambridge, Elect Engn Div, Cambridge CB3 0FA, England
[4] Kyung Hee Univ, Dept Informat Sci Display, Seoul 130701, South Korea
来源：
ELECTRONICS LETTERS | 2011年 / 47卷 / 07期
基金：
中国国家自然科学基金; 英国工程与自然科学研究理事会;
关键词：
D O I：
10.1049/el.2011.0343
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A generalised Butterworth-Van Dyke (GBVD) equivalent circuit model for a thin-film bulk acoustic resonator (FBAR), especially for a FBAR with a high electromechanical coupling constant (k(t)(2)), is presented. The derivation starts from the ideal impedance formula for the FBAR, then acoustic loss, dielectric loss, and electrode electrical loss are introduced step by step. Results show that the widely used modified Butterworth-Van Dyke (MBVD) model is a special case of a GBVD model using a low k(t)(2) approximation.
引用
收藏
页码：424 / 425
页数：2
相关论文
共 50 条
  • [1] Modified Butterworth-Van Dyke circuit for FBAR resonators and automated measurement system
    Larson, JD
    Bradley, PD
    Wartenberg, S
    Ruby, RC
    2000 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 2000, : 863 - 868
  • [2] Modified Butterworth-Van Dyke Circuit Model for the Lithium Niobate Piezoelectric Acoustically Excited Antenna with Electrode Effects
    Fu, Yifan
    Zhu, Xiangwei
    Li, Du
    2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMC, 2023, : 37 - 39
  • [3] Virtual Sensor Array Based on Butterworth-Van Dyke Equivalent Model of QCM for Selective Detection of Volatile Organic Compounds
    Li, Dongsheng
    Xie, Zihao
    Qu, Mengjiao
    Zhang, Qian
    Fu, Yongqing
    Xie, Jin
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (39) : 47043 - 47051
  • [4] Finite element modelling of a thin-film bulk acoustic resonator (FBAR)
    Buccella, Concettina
    De Santis, Valerio
    Feliziani, Mauro
    Tognolatti, Piero
    COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 2008, 27 (06) : 1296 - 1306
  • [5] Multifunctional ZnO-Based Thin-Film Bulk Acoustic Resonator for Biosensors
    Ying Chen
    Pavel I. Reyes
    Ziqing Duan
    Gaurav Saraf
    Richard Wittstruck
    Yicheng Lu
    Olena Taratula
    Elena Galoppini
    Journal of Electronic Materials, 2009, 38 : 1605 - 1611
  • [6] Thin-film bulk acoustic wave resonator floating above CMOS substrate
    Campanella, Humberto
    Cabruja, Enric
    Montserrat, Josep
    Uranga, Arantxa
    Barniol, Nuria
    Esteve, Jaume
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (01) : 28 - 30
  • [7] Multifunctional ZnO-Based Thin-Film Bulk Acoustic Resonator for Biosensors
    Chen, Ying
    Reyes, Pavel I.
    Duan, Ziqing
    Saraf, Gaurav
    Wittstruck, Richard
    Lu, Yicheng
    Taratula, Olena
    Galoppini, Elena
    JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (08) : 1605 - 1611
  • [8] Automated on-wafer extraction of equivalent-circuit parameters in thin-film bulk acoustic wave resonators and substrate
    Campanella, Humberto
    Nouet, Pascal
    Uranga, Arantxa
    de Paco, Pedro
    Barniol, Nuria
    Esteve, Jaume
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2008, 50 (01) : 4 - 7
  • [9] Molecularly imprinted sensor integrated with thin-film bulk acoustic resonator for drug detection
    Chen, Jian-Ming
    Lü, Qi-Meng
    Wu, Guang-Min
    Chu, He-Qun
    Mai, J.D.
    Guangxue Jingmi Gongcheng/Optics and Precision Engineering, 2013, 21 (09): : 2272 - 2278
  • [10] A THIN-FILM BULK-ACOUSTIC-WAVE RESONATOR-CONTROLLED OSCILLATOR ON SILICON
    BURKLAND, WA
    LANDIN, AR
    KLINE, GR
    KETCHAM, RS
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) : 531 - 533
12345