Influence of post-annealing time on properties of ZnO: (Li, N) thin films prepared by ion beam enhanced deposition method

被引：4
|
作者：
Xie, Jiansheng [1 ]
Lu, Qi-fei [1 ]
Chen, Qiang [1 ]
机构：
[1] Changzhou Univ, Funct Mat Lab, Changzhou 213016, Jiangsu, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 05期
关键词：
OPTICAL-PROPERTIES; ZINC-OXIDE; TEMPERATURE; FABRICATION; LITHIUM;
D O I：
10.1007/s10854-014-2466-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lithium and nitrogen dual-doped ZnO films [ZnO: (Li, N)] with Li concentrations of 4 at.% were grown on glass substrates by ion beam enhanced deposition (IBED) and then annealing in Ar flow. The influence of post-annealing time on their structural, optical and electrical properties was studied. The co-doped ZnO: (Li, N) films have a ZnO wurtzite structure. Electrical property studies indicated that the ZnO: (Li, N) film annealed at 500 degrees C in Ar showed p-type conductivity with a lowest resistivity of 10.83 Omega cm. The transmittance of ZnO: (Li, N) film is above 80 % in visible range and the band gap of ZnO: (Li, N) film have a evident narrowing after p-type doping.
引用
收藏
页码：2669 / 2673
页数：5
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