Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD

被引：11

作者：

Cheong, MG ^{[1
]}

Kim, KS

Namgung, NW

Han, MS

Yang, GM

Hong, CH

Suh, EK

Lim, KY

Lee, HJ

Yoshikawa, A

机构：

[1] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 561756, South Korea

[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea

[3] Chiba Univ, Ctr Frontier Elect & Photon, Chiba, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷 / 1-4期

基金：

日本学术振兴会;

关键词：

Mg-doped GaN; rapid thermal annealing; transport properties;

D O I：

10.1016/S0022-0248(00)00809-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In a temperature range of 750-1050 degreesC rapid thermal annealing was carried out to activate Mg impurities in GaN epilayers grown on sapphire by metalorganic chemical vapor deposition. Activation increased with temperature until near 950 degreesC, and then decreased very slowly with further increasing temperatures. Hall mobility decreased (from 16.5 cm(2)/Vs at 750 degreesC) with increasing annealing temperature until near 1000 degreesC (12.8cm(2)/Vs). The temperature-dependent Hall effects demonstrated very low compensation, around 1%, for all the samples. The low compensation and high mobility may be due to post-growth cooling in nitrogen atmosphere. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：734 / 738

页数：5

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