Estimation of Threshold Voltage Shift in a-IGZO TFTs under Different Bias Temperature Stress by Improved Stretched-Exponential Equation

被引：0

作者：

Ju, Xin ^{[1
]}

Xiao, Xiang ^{[1
]}

Xiao, Yuxiang ^{[1
]}

Zhang, Shengdong ^{[1
]}

机构：

[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China

来源：

2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we study threshold voltage (V-th) shift degradation in amorphous IGZO (a-IGZO) TFTs. The TFTs employ the bottom-gate staggered structure with an etch stopped layer. An improvement is presented to well known stretched-exponential equation for the V-th shift, and a systematic extraction method is provided. The V-th shift in a-IGZO TFTs is estimated quantitatively under different gate bias stress and temperature. Good agreements are obtained between calculated results and measured data.

引用

页码：149 / 152

页数：4

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