Effect of a compact ZnO interlayer on the performance of ZnO-based dye-sensitized solar cells

被引:35
|
作者
Perez-Hernandez, G. [1 ,2 ]
Vega-Poot, A. [1 ]
Perez-Juarez, I. [1 ]
Camacho, J. M. [1 ]
Ares, O. [1 ]
Rejon, V. [1 ]
Pena, J. L. [1 ]
Oskam, G. [1 ]
机构
[1] CINVESTAV IPN, Dept Fis Aplicada, Merida 97310, Yucatan, Mexico
[2] Univ Politecn Golfo Mexico, Dept Ingn Sistemas & Tecnol Ind, Paraiso 86611, Tabasco, Mexico
关键词
ZnO nanoparticles; Blocking layer; Forced hydrolysis; rf Magnetron sputtering; Photovoltage decay; CONVERSION EFFICIENCY; ELECTRON INJECTION; CHARGE-TRANSPORT; BLOCKING LAYERS; BACK-REACTION; TIO2; NANOSTRUCTURES; RECOMBINATION; SEMICONDUCTOR; FABRICATION;
D O I
10.1016/j.solmat.2011.05.012
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
ZnO is a promising material for application in dye-sensitized solar cells, related to its attractive electrical properties and the facile preparation of nanomaterials, with excellent control over the structure and morphology. In this work ZnO-based dye-sensitized solar cells were prepared, and the effect of the presence of a compact ZnO interlayer between the transparent conducting oxide (TCO) electrode and the nanostructured, mesoporous ZnO film on the performance of the solar cell is reported. The compact interlayer was deposited using planar rf magnetron sputtering, and the ZnO nanomaterial was prepared by forced hydrolysis from zinc acetate in ethanol solution. The presence of the compact interlayer has a positive effect on the overall characteristics of the solar cell and decreases the recombination rate from the TCO substrate, resulting in a higher open circuit voltage under low light conditions. The best efficiency of non-optimized solar cells at 1 sun was 4.0%. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:21 / 26
页数:6
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