FIRST-PRINCIPLES MODELING OF BIPOLAR RESISTIVE SWITCHING IN METAL-OXIDE BASED MEMORY

被引：0
|
作者：
Makarov, Alexander [1 ]
Weinbub, Josef [1 ]
Sverdlov, Viktor [1 ]
Selberherr, Siegfried [1 ]
机构：
[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria
来源：
EUROPEAN SIMULATION AND MODELLING CONFERENCE 2010 | 2010年
关键词：
RRAM; resistive switching mechanism; stochastic model; Monte Carlo method; CURRENT-VOLTAGE CHARACTERISTICS; RESISTANCE;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A microscopic model of the resistive switching mechanism in bipolar metal-oxide based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. A hysteresis cycle of RRAM switching simulated with the model including the ion dynamics is in good agreement with experimental results.
引用
收藏
页码：181 / 186
页数：6
相关论文
共 50 条
  • [31] Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
    Gao, Bin
    Sun, Bing
    Zhang, Haowei
    Liu, Lifeng
    Liu, Xiaoyan
    Han, Ruqi
    Kang, Jinfeng
    Yu, Bin
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) : 1326 - 1328
  • [32] First Principles Studies of Metal-Oxide Surfaces
    Henrik Grönbeck
    Topics in Catalysis, 2004, 28 : 59 - 69
  • [33] First principles studies of metal-oxide surfaces
    Grönbeck, H
    TOPICS IN CATALYSIS, 2004, 28 (1-4) : 59 - 69
  • [34] Realization of Dendritic characteristics Based on Metal Oxide Resistive Switching Memory
    Yi, Yading
    Ding, Xiangxiang
    Song, Shiyue
    Feng, Yuling
    Liu, Lifeng
    2022 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2022,
  • [35] Physics-Based Stochastic Three-Dimensional Modeling for Metal-Oxide Resistive Random Access Memory
    Chen, Siyuan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (07) : 3353 - 3358
  • [36] Switching mechanism in resistive random access memory by first-principles calculation using practical model based on experimental results
    Moriyama, Takumi
    Yamasaki, Takahiro
    Hida, Sohta
    Ohno, Takahisa
    Kishida, Satoru
    Kinoshita, Kentaro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (04)
  • [37] Bipolar resistive switching in heterostructures: Bismuth oxide/normal metal
    Tulina, N. A.
    Borisenko, I. Yu.
    Ionov, A. M.
    Shmyt'ko, I. M.
    SOLID STATE COMMUNICATIONS, 2010, 150 (43-44) : 2089 - 2092
  • [38] Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory
    Yang, Fann-Wei
    Chen, Kai-Huang
    Cheng, Chien-Min
    Su, Feng-Yi
    CERAMICS INTERNATIONAL, 2013, 39 : S729 - S732
  • [39] Metal oxide resistive switching memory: Materials, properties and switching mechanisms
    Kumar, D.
    Aluguri, R.
    Chand, U.
    Tseng, T. Y.
    CERAMICS INTERNATIONAL, 2017, 43 : S547 - S556
  • [40] Resistive gas sensors based on metal-oxide nanowires
    Mirzaei, Ali
    Lee, Jae-Hyoung
    Majhi, Sanjit Manohar
    Weber, Matthieu
    Bechelany, Mikhael
    Kim, Hyoun Woo
    Kim, Sang Sub
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (24)
12345