A Sub-0.6V,34.8nW,4.6ppm/°C CMOS Voltage Reference using Subthreshold and Body Effect Techniques

被引：0

作者：

Qu, Zihua ^{[1
]}

Zhang, Meng ^{[1
]}

Wu, Jianhui ^{[1
]}

Li, Yongjia ^{[1
]}

机构：

[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Peoples R China

来源：

2009 ASIA PACIFIC CONFERENCE ON POSTGRADUATE RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIMEASIA 2009) | 2009年

关键词：

BANDGAP REFERENCE; OPERATION; SUB-1-V;

D O I：

10.1109/PRIMEASIA.2009.5397394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultra low-voltage and low-power CMOS voltage reference was proposed in this paper. Subthreshold and body effect techniques are used to achieve temperature compensation. No resistor and BJT are used in this structure. The proposed circuit has been simulated with Charted 0.18-mu m standard CMOS process. The simulated results show that the voltage reference can operate with sub-0.6V supply and total supply current is 60nA at 0.58V supply at room temperature. The temperature coefficient of the output voltage is 4.6ppm/degrees C, in a range from -40 degrees C to 85 degrees C.

引用

页码：275 / 278

页数：4

共 36 条

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