Characterization of B-C-N hybrid prepared by ion implantation

被引:6
|
作者
Shimoyama, I
Baba, YJ
Tetsuhiro, S
Nath, KG
Sasaki, M
Okuno, K
机构
[1] Japan Atom Energy Res Inst, Ibaraki 3191195, Japan
[2] Shizuoka Univ, Fac Sci, Oya, Shizuoka 4228529, Japan
来源
关键词
D O I
10.1116/1.1611887
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ion implantation method is applied to synthesize B-C-N hybrids and their electronic structures are characterized by x-ray photoelectron spectroscopy. A boron nitride film is deposited on a graphite target by borazine plasma implantation. At the interface between the BN film and the graphite, a variety of bonding combinations including B-N, B-C, and C-N are observed. This proved that B-C-N hybrids are formed by this method. (C) 2003 American Vacuum Society.
引用
收藏
页码:1843 / 1848
页数:6
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