Spectroscopic and SEM investigations of porous silicon doped with dyes

被引:2
|
作者
Bruska, A
Chernook, A
Hietschold, M
vonBorczyskowski, C
机构
[1] Institute of Physics, Tech. University Chemnitz-Zwickau
关键词
D O I
10.1016/0169-4332(96)00092-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Results of photoluminescence (PL) and scanning electron microscopy (SEM) studies of porous silicon (PS) layers doped with stilbene 1 (St1) and kiton red 620 (Kt) dyes before and after aging are reported. The PS layers impregnated with St1 and Kt emit in different spectral regions. An extent of the layer oxidation before the dye impregnation has been shown to give a possibility of tuning the PS emission range. The revealed effects might be applied in optoelectronic technology.
引用
收藏
页码:427 / 430
页数:4
相关论文
共 50 条
  • [21] Spectroscopic investigations on vanadyl doped cadmium struvite
    Ravikumar, RVSSN
    Madhu, N
    Reddy, BJ
    Reddy, YP
    Rao, PS
    PHYSICA SCRIPTA, 1997, 55 (05): : 637 - 638
  • [22] Erbium-doped silicon and porous silicon for optoelectronics
    Reed, GT
    Kewell, AK
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 40 (2-3): : 207 - 215
  • [23] A spectroscopic study on the luminescence of Er in porous silicon
    Hommerich, U
    Namavar, F
    Cremins, A
    Bray, KL
    APPLIED PHYSICS LETTERS, 1996, 68 (14) : 1951 - 1953
  • [24] Spectroscopic study on the luminescence of Er in porous silicon
    Hampton Univ, Hampton, United States
    Appl Phys Lett, 14 (1951-1953):
  • [25] Spectroscopic characterisation of chemically modified porous silicon
    Gun'ko, YK
    Perova, TS
    Balakrishnan, S
    Potapova, DA
    Moore, RA
    Astrova, EV
    OPTO-IRELAND 2002: OPTICS AND PHOTONICS TECHNOLOGIES AND APPLICATIONS, PTS 1 AND 2, 2003, 4876 : 788 - 795
  • [26] Spectroscopic ellipsometry of porphyrin adsorbed in porous silicon
    Babonas, GJ
    Snitka, V
    Rodaite, R
    Simkiene, I
    Reza, A
    Treideris, M
    ACTA PHYSICA POLONICA A, 2005, 107 (02) : 319 - 323
  • [27] CHARACTERIZATION OF POROUS SILICON LAYERS BY SPECTROSCOPIC ELLIPSOMETRY
    ROSSOW, U
    MUNDER, H
    THONISSEN, M
    THEISS, W
    JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 205 - 209
  • [28] LUMINESCENCE QUENCHING OF POROUS SILICON BY ORGANIC-DYES
    FISHER, DL
    HARPER, J
    LAUERHAAS, JM
    SAILOR, MJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 207 : 142 - COLL
  • [29] PAT and SEM study of porous silicon formed by anodization methods
    Liu, Jian
    Wei, Long
    Wang, Huiyao
    Ma, Chuangxin
    Wang, Baoyi
    He Jishu/Nuclear Techniques, 2000, 23 (06): : 376 - 380
  • [30] ANISOTROPY INVESTIGATIONS AND PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON
    BASMAJI, P
    SURDUTOVICH, G
    VITLINA, R
    KOLENDA, J
    BAGNATO, VS
    MOHAJERIMOGHADDAM, H
    PEYGHAMBARIAN, N
    SOLID STATE COMMUNICATIONS, 1994, 91 (08) : 649 - 653