Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

被引：57

作者：

Li, Ziyuan ^{[1
]}

Allen, Jeffery ^{[2
]}

Allen, Monica ^{[2
]}

Tan, Hark Hoe ^{[1
,3
]}

Jagadish, Chennupati ^{[1
,3
]}

Fu, Lan ^{[1
,3
]}

机构：

[1] Australian Natl Univ, Res Sch Phys, Dept Elect Mat Engn, Canberra, ACT 2601, Australia

[2] US Air Force, Res Lab, Munit Directorate, Eglin AFB, FL 32542 USA

[3] Australian Natl Univ, Res Sch Phys, Dept Elect Mat Engn, Australian Res Council,Ctr Excellence Transformat, Canberra, ACT 2601, Australia

来源：

MATERIALS | 2020年 / 13卷 / 06期

基金：

澳大利亚研究理事会;

关键词：

III-V semiconductor; nanowire; infrared photodetector; MIDINFRARED PHOTODETECTORS; INGAAS NANOWIRES; HIGH-DETECTIVITY; INAS NANOWIRES; INP NANOWIRES; SOLAR-CELLS; GROWTH; ULTRAVIOLET; INTEGRATION; DEVICES;

D O I：

10.3390/ma13061400

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.

引用

页数：20

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