Defect oriented fault diagnosis for semiconductor memories using charge analysis:: Theory and experiments

被引：9

作者：

de Paúl, I ^{[1
]}

Rosales, M ^{[1
]}

Alorda, B ^{[1
]}

Segura, J ^{[1
]}

Hawkins, C ^{[1
]}

Soden, J ^{[1
]}

机构：

[1] Univ Illes Balears, Dept Phys, Palma de Mallorca 07071, Spain

来源：

19TH IEEE VLSI TEST SYMPOSIUM, PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/VTS.2001.923451

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

We evaluated a diagnostic technique based on the charge delivered to the IC during a transition. Charge computed from the transient supply current is related to the circuit internal activity. A specific activity can be forced into the circuit using appropriate test vectors to highlight possible defect locations. Experimental results from a small test circuit and a 256K SRAM demonstrate the experimental viability of the technique. The theoretical foundation is also discussed.

引用

页码：286 / 291

页数：6

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