Defect oriented fault diagnosis for semiconductor memories using charge analysis:: Theory and experiments

被引：9
|
作者：
de Paúl, I [1 ]
Rosales, M [1 ]
Alorda, B [1 ]
Segura, J [1 ]
Hawkins, C [1 ]
Soden, J [1 ]
机构：
[1] Univ Illes Balears, Dept Phys, Palma de Mallorca 07071, Spain
来源：
19TH IEEE VLSI TEST SYMPOSIUM, PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/VTS.2001.923451
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
We evaluated a diagnostic technique based on the charge delivered to the IC during a transition. Charge computed from the transient supply current is related to the circuit internal activity. A specific activity can be forced into the circuit using appropriate test vectors to highlight possible defect locations. Experimental results from a small test circuit and a 256K SRAM demonstrate the experimental viability of the technique. The theoretical foundation is also discussed.
引用
收藏
页码：286 / 291
页数：6
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