InAs nanowires on Si substrates grown by solid source molecular beam epitaxy

被引：44

作者：

Ihn, Soo-Ghang ^{[1
]}

Song, Jong-In ^{[1
]}

机构：

[1] GIST, Ctr Distributed Sensor Network, Kwangju 500712, South Korea

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 35期

关键词：

D O I：

10.1088/0957-4484/18/35/355603

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Au-activated InAs nanowires were grown on Si substrates by solid source molecular beam epitaxy (SSMBE). Epitaxial growth of InAs nanowires turned out to be very sensitive to the surface condition of the Si substrates. InAs nanowires having a < 111 > growth direction, a high crystalline quality and a high aspect ratio over 300 with a uniform lateral size along the growth direction were grown using a high-temperature pre-annealing process in the MBE growth chamber to remove residual oxides from the surface of the Si substrates.

引用

页数：4

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