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Stacking faults and their effect on magnetocrystalline anisotropy in Co and Co-alloy thin films
被引:24
|作者:
Bian, B
[1
]
Yang, W
Laughlin, DE
Lambeth, DN
机构:
[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
[2] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA
基金:
美国国家科学基金会;
美国安德鲁·梅隆基金会;
关键词:
anisotropy;
Co-alloy thin films;
electron diffraction;
magnetic recording;
stacking faults;
TEM;
D O I:
10.1109/20.950869
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Stacking faults in (10 (1) over bar0) unicrystal Co and Co-alloy thin films have been analyzed by the electron diffraction technique. As predicted no diffraction contrast of stacking faults could be observed when the beam is parallel to the [10 (1) over bar0] direction. However, both by plan-view TEM observation and electron diffraction along the [11 (2) over bar0] direction reveal that the stacking fault density in biased pure Co (10 (1) over bar0) thin films is much lower than that in unbiased ones. The addition of Cr in Co films significantly reduces stacking fault density whereas the addition of 8at% Pt leads to a considerable increase in stacking fault density. Our results show that stacking faults in Co thin films significantly, and negatively, affect the anisotropy energy density and its temperature dependence.
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页码:1456 / 1458
页数:3
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