Terahertz responsivity of AlGaN/GaN bow-tie diode detectors at the temperatures of 295 K and 80 K

被引：1

作者：

Jorudas, J. ^{[1
]}

Kasalynas, I ^{[1
]}

机构：

[1] Ctr Phys Sci & Technol FTMC, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania

来源：

2022 47TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ 2022) | 2022年

关键词：

D O I：

10.1109/IRMMW-THz50927.2022.9895472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

terahertz (THz) responsivity of the planar bow-tie (BT) diodes based on AlGaN/GaN high electron mobility transistor (HEMT) structures were investigated at the temperatures of 295 K and 80 K in the frequency range of 150-600 GHz. At 295 K, the zero-bias responsivity of the BT diode was found to be of about 72 mV/W. Biasing the detector by +/- 1 V allowed us to increase the responsivity by at least 50 times, while cooling the detectors down to 80 K demonstrated the increase by up to 20 times independently on the frequency of THz beam.

引用

页数：2

共 34 条

[21] Diced and grounded broadband bow-tie antenna with tuning stub for resonant tunnelling diode terahertz oscillators
Alharbi, Khalid Hamed
Khalid, Ata
Ofiare, Afesomeh
Wang, Jue
Wasige, Edward
IET MICROWAVES ANTENNAS & PROPAGATION, 2017, 11 (03) : 310 - 316
[22] High-Sensitivity Wideband THz Detectors Based on GaN HEMTs with Integrated Bow-Tie Antennas
Bauer, Maris
Raemer, Adam
Boppel, Sebastian
Chevtchenko, Serguei
Lisauskas, Alvydas
Heinrich, Wolfgang
Krozer, Viktor
Roskos, Hartmut G.
2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2015, : 1 - 4
[23] Bow-Tie-Antenna-Coupled Terahertz Detectors using AlGaN/GaN Field-Effect Transistors with 0.25 Micrometer Gate Length
Bauer, Maris
Lisauskas, Alvydas
Boppel, Sebastian
Mundt, Martin
Krozer, Viktor
Roskos, Hartmut G.
Chevtchenko, Serguei
Wuerfl, Joachim
Heinrich, Wolfgang
Traenkle, Guenther
2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2013, : 212 - 215
[24] On-chip integration of laser-ablated zone plates for detection enhancement of InGaAs bow-tie terahertz detectors
Minkevicius, L.
Tamosiunas, V.
Madeikis, K.
Voisiat, B.
Kasalynas, I.
Valusis, G.
ELECTRONICS LETTERS, 2014, 50 (19) : 1367 - 1368
[25] Zero-bias GaN Implanted Self-Switching Diode coupled with Bow-tie Antenna for THz applications
Sangare, Paul
Ducournau, Guillaume
Grimbert, Bertrand
Faucher, Marc
Gaquiere, Christophe
2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2014, : 806 - 809
[26] Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature
Grigelionis, Ignas
Jorudas, Justinas
Jakstas, Vytautas
Janonis, Vytautas
Kasalynas, Irmantas
Prystawko, Pawel
Kruszewski, Piotr
Leszczynski, Michal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 93 : 280 - 283
[27] Fabrication of Resonant-Tunneling-Diode Terahertz Oscillators Using Rectangular Cavity Resonators and Bow-Tie Antennas for High Output Powers
Tanaka, Hiroki
Kobayashi, Kazunori
Izumi, Ryunosuke
Suzuki, Safumi
Asada, Masahiro
2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
[28] Air-gap separated ground double bow-tie antenna for Ka/K and partial Ku band imaging applications
Lansdorf, Miguel
Ruan, Cunjun
Yan, Zhiwen
2020 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2020 ONLINE), 2020,
[29] Breast cancer detection using K-nearest neighbors data mining method obtained from the bow-tie antenna dataset
Aydin, Emine Avsar
Keles, Mumine Kaya
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2017, 27 (06)
[30] Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K
Yang, An
Wei, Xing
Shen, Wenchao
Hu, Yu
Chen, Tiwei
Wang, Heng
Zhou, Jiaan
Xing, Runxian
Zhang, Xiaodong
Yu, Guohao
Fan, Yaming
Cai, Yong
Zeng, Zhongming
Zhang, Baoshun
CRYSTALS, 2023, 13 (04)

← 1 2 3 4 →