Terahertz responsivity of AlGaN/GaN bow-tie diode detectors at the temperatures of 295 K and 80 K

被引：1

作者：

Jorudas, J. ^{[1
]}

Kasalynas, I ^{[1
]}

机构：

[1] Ctr Phys Sci & Technol FTMC, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania

来源：

2022 47TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ 2022) | 2022年

关键词：

D O I：

10.1109/IRMMW-THz50927.2022.9895472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

terahertz (THz) responsivity of the planar bow-tie (BT) diodes based on AlGaN/GaN high electron mobility transistor (HEMT) structures were investigated at the temperatures of 295 K and 80 K in the frequency range of 150-600 GHz. At 295 K, the zero-bias responsivity of the BT diode was found to be of about 72 mV/W. Biasing the detector by +/- 1 V allowed us to increase the responsivity by at least 50 times, while cooling the detectors down to 80 K demonstrated the increase by up to 20 times independently on the frequency of THz beam.

引用

页数：2

共 34 条

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[5] Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures
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