Atomic and electronic structures of amorphous ZrO2 and HfO2 films

被引：37

作者：

Gritsenko, V

Gritsenko, D

Shaimeev, S

Aliev, V

Nasyrov, K

Erenburg, S

Tapilin, V

Wong, H

Poon, MC

Lee, JH

Lee, JW

Kim, CW

机构：

[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China

[2] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Russian Acad Sci, Inst Inorgan Chem, Novosibirsk 630090, Russia

[4] Novosibirsk Catalysis Inst, Novosibirsk 630090, Russia

[5] Hong Kong Univ Sci & Technol, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China

[6] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 81卷 / 2-4期

关键词：

high-kappa dielectric; atomic structure; electronic structure; charge transport;

D O I：

10.1016/j.mee.2005.03.056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atomic and electronic structures of ZrO2 and HfO2 films deposited using sputtering technique were studied by X-ray diffraction (XRD), EXAFS spectroscopy, photoemission (with X-ray and ultraviolet excitation sources) and electron energy loss spectroscopy (EELS). XRD results indicated that the as-deposited films were amorphous and a monoclinic phase was detected after annealing them in ambient at 800 degrees C. Photoemission results indicated that the ZrO2 valence band consists of two bands separated by an ionic gap of 6 eV. The lower band of 10 eV width is occupied mainly by 0 2s states. EELS results indicated that the bandgap of ZrO2 and HfO2 films are 4.7 and 5.7 eV, respectively. (c) 2005 Published by Elsevier B.V.

引用

页码：524 / 529

页数：6

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