Coulomb blockade effects in silicon nanoparticles embedded in thin silicon-rich oxide films

被引：17
|
作者：
Morales-Sanchez, A. [1 ]
Barreto, J. [1 ]
Dominguez, C. [1 ]
Aceves, M. [2 ]
Yu, Z. [2 ]
Luna-Lopez, J. A. [3 ]
机构：
[1] IMB CNM CSIC, Barcelona 08193, Spain
[2] INAOE, Dept Elect, Puebla 72000, Mexico
[3] Univ Nacl Autonoma Mexico, CCMC, Dept Opt, Ensenada 22800, Baja California, Mexico
来源：
NANOTECHNOLOGY | 2008年 / 19卷 / 16期
关键词：
D O I：
10.1088/0957-4484/19/16/165401
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silicon nanoparticles ( Si-nps) embedded in silicon oxide matrix were created using silicon-rich oxide ( SRO) films deposited by low pressure chemical vapour deposition ( LPCVD) followed by a thermal annealing at 1100 degrees C. The electrical properties were studied using metal-oxide-semiconductor ( MOS) structures with the SRO films as the active layers. Capacitance versus voltage (C-V) exhibited downward and upward peaks in the accumulation region related to charge trapping and de-trapping effects of Si-nps, respectively. Current versus voltage (I-V) measurements showed fluctuations in the form of spike-like peaks and a clear staircase at room temperature. These effects have been related to the Coulomb blockade ( CB) effect in the silicon nanoparticles embedded in SRO films. The observed quantum effects are due to 1 nm nanoparticles.
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页数：5
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