Coulomb blockade effects in silicon nanoparticles embedded in thin silicon-rich oxide films

被引：17

作者：

Morales-Sanchez, A. ^{[1
]}

Barreto, J. ^{[1
]}

Dominguez, C. ^{[1
]}

Aceves, M. ^{[2
]}

Yu, Z. ^{[2
]}

Luna-Lopez, J. A. ^{[3
]}

机构：

[1] IMB CNM CSIC, Barcelona 08193, Spain

[2] INAOE, Dept Elect, Puebla 72000, Mexico

[3] Univ Nacl Autonoma Mexico, CCMC, Dept Opt, Ensenada 22800, Baja California, Mexico

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 16期

关键词：

D O I：

10.1088/0957-4484/19/16/165401

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon nanoparticles ( Si-nps) embedded in silicon oxide matrix were created using silicon-rich oxide ( SRO) films deposited by low pressure chemical vapour deposition ( LPCVD) followed by a thermal annealing at 1100 degrees C. The electrical properties were studied using metal-oxide-semiconductor ( MOS) structures with the SRO films as the active layers. Capacitance versus voltage (C-V) exhibited downward and upward peaks in the accumulation region related to charge trapping and de-trapping effects of Si-nps, respectively. Current versus voltage (I-V) measurements showed fluctuations in the form of spike-like peaks and a clear staircase at room temperature. These effects have been related to the Coulomb blockade ( CB) effect in the silicon nanoparticles embedded in SRO films. The observed quantum effects are due to 1 nm nanoparticles.

引用

页数：5

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