First-principles study of GaSb(001) surface reconstructions

被引：0

作者：

Righi, MC ^{[1
]}

Magri, R ^{[1
]}

Bertoni, CM ^{[1
]}

机构：

[1] Univ Modena & Reggio Emilia, INFM, Natl Res Ctr NanoStruct & BioSyst Surfaces, Dipartimento Fis, I-41100 Modena, Italy

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Different models for the GaSb-(001) surface reconstruction have been proposed on the basis of experimental observations in typical GaSb growth conditions (V/III flux ratio > 1). We have analyzed their relative stability by means of first-principles pseudopotential plane-wave calculations. We constructed the surface phase diagram as a function of the chemical potential of the elemental constituents to mimic different growth conditions.

引用

页码：375 / 376

页数：2

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