Novel DUV photoresist modeling by optical thin-film decomposition from spectral ellipsometry/reflectometry data

被引：0
|
作者：
Niu, XH [1 ]
Jakatdar, N [1 ]
Spanos, C [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
FLATNESS, ROUGHNESS, AND DISCRETE DEFECTS CHARACTERIZATION FOR COMPUTER DISKS, WAFERS, AND FLAT PANEL DISPLAYS II | 1998年 / 3275卷
关键词：
DUV photoresist; decomposition; wavelet de-noising; thin-film; simulated-annealing; Kramers-Kronig;
D O I：
10.1117/12.304403
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New metrology for characterizing the chemically amplified resist is required to meet the stringent demands of DW lithography. In this paper, we present a systematic methodology to characterize DW photoresist by decomposing the resist thin-film into different empirical components according to their optical properties. The innovation of this metrology includes three parts: ellipsometry and reflectometry measurement data de-noising; sophisticated dispersion models derived from the Kramers-Kronig relations for optical thin-film component description; and an intelligent simulated annealing algorithm for the optimization computational engine.
引用
收藏
页码：172 / 179
页数：8
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