A compact low-power SiGe:C BiCMOS amplifier for 77-81 GHz automotive radar

被引：0
|
作者：
Schleicher, Bernd [1 ]
Chartier, Sebastien [1 ]
Fischer, Gerhard [2 ]
Korndoerfer, Falk [2 ]
Borngraber, Johannes [2 ]
Feger, Till [1 ]
Schumacher, Hermann [1 ]
机构：
[1] Univ Ulm, Inst Elect Devices & Circuits, Albert Einstein Allee 45, D-89081 Ulm, Germany
[2] IHP, D-15236 Frankfurt, Germany
来源：
2008 IEEE TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a single-ended fully integrated Si/SiGe HBT amplifier working at a center frequency of 79GHz is presented. The amplifier consists of three cascode stages. A trimmable line technique and an efficient DC filtering network were used. The amplifier shows a maximum measured gain of 13.2dB at exactly 79GHz and an excellent reverse isolation of more than 40 dB over the whole measured frequency range. Its performance was measured at different temperatures, showing a decrease of 5.3dB in gain between room temperature and 85 degrees C. The measured -1 dB input compression point is at -15 dBm. The power consumption is 52 mW at a supply voltage of 2.7 V. The circuit has a compact layout and consumes an area of 525 x 500 mu m(2) including bonding pads.
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页码：195 / +
页数：2
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