Influences of Cu and Fe impurities on oxygen precipitation in Czochralski-grown silicon

被引：18
|
作者：
Shen, B [1 ]
Jablonski, J [1 ]
Sekiguchi, T [1 ]
Sumino, K [1 ]
机构：
[1] TOHOKU UNIV, INST MAT RES, SENDAI, MIYAGI 98077, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 08期
关键词：
silicon; Czochralski-grown silicon; oxygen impurities; oxygen precipitation; metallic impurities; Cu impurities; Fe impurities;
D O I：
10.1143/JJAP.35.4187
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Characteristics of oxygen precipitation in Czochralski-grown silicon (CZ-Si) intentionally contaminated with Cu or Fe are investigated by means of Fourier-transform infrared spectroscopy (FTIR), transmission electron micros copy (TEM), electron-beam-induced-current (EBIC) mapping and etch pit observation. It is found that oxygen precipitation is not influenced by the presence of Cu impurities, while it is enhanced significantly by the presence of Fe impurities even if the concentration of Fe is much lower than that of Cu. Precipitations of supersaturated Cu and O impurities are found to proceed independently of each other in Si crystals. Oxygen precipitates in an Fe-contaminated specimen are much denser and smaller than those in a noncontaminated specimen. Fe impurities seem to react with minute Si oxide particles which are present in as-grown CZ-Si crystals and reduce the nucleation barrier for oxygen precipitation.
引用
收藏
页码：4187 / 4194
页数：8
相关论文
共 50 条
  • [21] THE EFFECT OF GROWTH STRIATION ON THE OXYGEN PRECIPITATION IN CZOCHRALSKI-GROWN SILICON-WAFERS
    IMAI, M
    SHIRAISHI, Y
    SHIBATA, M
    NODA, H
    YATSURUGI, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C452 - C452
  • [22] Electrical activity of defects induced by oxygen precipitation in Czochralski-grown silicon wafers
    Mchedlidze, Teimouraz
    Matsumoto, Kei
    Asano, Eiichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (6 A): : 3426 - 3432
  • [23] MECHANISM OF INTERNAL GETTERING OF INTERSTITIAL IMPURITIES IN CZOCHRALSKI-GROWN SILICON
    GILLES, D
    WEBER, ER
    HAHN, S
    PHYSICAL REVIEW LETTERS, 1990, 64 (02) : 196 - 199
  • [24] Precipitation of Cu and Ni on Frank-type partial dislocations in Czochralski-grown silicon
    Shen, B
    Zhang, R
    Shi, Y
    Zheng, YD
    Sekiguchi, T
    Sumino, K
    CHINESE PHYSICS LETTERS, 1996, 13 (04) : 289 - 292
  • [25] OXYGEN PRECIPITATION AND THERMAL DONOR FORMATION IN CZOCHRALSKI-GROWN SILICON DOPED WITH CARBON AND TIN
    WIJARANAKULA, W
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2737 - 2739
  • [26] The Marangoni convection and the oxygen concentration in Czochralski-grown silicon
    Xu, YS
    Liu, CC
    Wang, HY
    Hao, QY
    JOURNAL OF CRYSTAL GROWTH, 2003, 254 (3-4) : 298 - 304
  • [27] PRECIPITATION ALONG GROWTH SWIRLS IN CZOCHRALSKI-GROWN SILICON WAFERS
    SCHAAKE, HF
    RUIZ, HDJ
    JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 857 - 857
  • [28] Re-dissolution of gettered iron impurities in Czochralski-grown silicon
    Zhang, P
    Istratov, AA
    Väinölä, H
    Weber, ER
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 577 - 579
  • [29] THE EFFECT OF THERMAL HISTORY DURING CRYSTAL-GROWTH ON OXYGEN PRECIPITATION IN CZOCHRALSKI-GROWN SILICON
    PUZANOV, NI
    EIDENZON, AM
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (03) : 406 - 413
  • [30] TEM STUDY OF NITROGEN ENHANCED OXYGEN PRECIPITATION IN NITROGEN-DOPED CZOCHRALSKI-GROWN SILICON
    ZHOU, X
    PRESTON, AR
    HUMPHREYS, CJ
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 211 - 216
12345