Influences of Cu and Fe impurities on oxygen precipitation in Czochralski-grown silicon

被引：18
|
作者：
Shen, B [1 ]
Jablonski, J [1 ]
Sekiguchi, T [1 ]
Sumino, K [1 ]
机构：
[1] TOHOKU UNIV, INST MAT RES, SENDAI, MIYAGI 98077, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 08期
关键词：
silicon; Czochralski-grown silicon; oxygen impurities; oxygen precipitation; metallic impurities; Cu impurities; Fe impurities;
D O I：
10.1143/JJAP.35.4187
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Characteristics of oxygen precipitation in Czochralski-grown silicon (CZ-Si) intentionally contaminated with Cu or Fe are investigated by means of Fourier-transform infrared spectroscopy (FTIR), transmission electron micros copy (TEM), electron-beam-induced-current (EBIC) mapping and etch pit observation. It is found that oxygen precipitation is not influenced by the presence of Cu impurities, while it is enhanced significantly by the presence of Fe impurities even if the concentration of Fe is much lower than that of Cu. Precipitations of supersaturated Cu and O impurities are found to proceed independently of each other in Si crystals. Oxygen precipitates in an Fe-contaminated specimen are much denser and smaller than those in a noncontaminated specimen. Fe impurities seem to react with minute Si oxide particles which are present in as-grown CZ-Si crystals and reduce the nucleation barrier for oxygen precipitation.
引用
收藏
页码：4187 / 4194
页数：8
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