Optical and Electrical Properties of Al/(p)Bi2S3 Schottky Junction

被引：2
|
作者：
Kachari, T. [1 ]
Wary, G. [2 ]
Rahman, A. [3 ]
机构：
[1] Bongaigaon Polytech, Bongaigaog, Assam, India
[2] Cotton Coll, Dept Phys, Gauhati, India
[3] Gauhati Univ, Dept Phys, Gauhati, India
来源：
5TH INTERNATIONAL CONFERENCE ON THERMOPHYSICAL PROPERTIES | 2010年 / 1249卷
关键词：
Barrier height; Ideality factor; PV effect;
D O I：
10.1063/1.3466558
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin film Al/(p)Bi2S3 Schottky junctions were prepared by vacuum evaporation under pressure 10(-6) Torr. The p-type Bi2S3 thin films with acceptor concentration (3.36-7.33)x10(16)/cm(3) were obtained by evaporating 'In' along with Bi2S3 powder and then annealing the films at 453K for 5 hours. Different junction-parameters such as ideality factor, barrier height, effective Richardson's constant, short-circuit current, etc. were determined from I-V characteristics. The junctions exhibited rectifying I-V characteristics and also photovoltaic effect. Ideality factor was found to decrease with the increase of temperature. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve high carrier efficiency. More works are being carried out in this direction.
引用
收藏
页码：202 / +
页数：2
相关论文
共 50 条
  • [21] Unraveling the effect of Bi2S3 on the optical, electrical and magnetic properties of γ-MnS-based composite thin films
    Amara, Z.
    Khadraoui, M.
    Miloua, R.
    Boukhachem, A.
    Ziouche, A.
    Nakrela, A.
    Bouzidi, A.
    PHYSICA B-CONDENSED MATTER, 2020, 585
  • [22] ELECTRICAL AND OPTICAL-PROPERTIES OF BISMUTH SULFIDE [BI2S3] THIN-FILMS PREPARED BY REACTIVE EVAPORATION
    LUKOSE, J
    PRADEEP, B
    SOLID STATE COMMUNICATIONS, 1991, 78 (06) : 535 - 538
  • [23] EFFECT OF SUBSTRATE TEMPERATURE ON THE STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF NEBULISED SPRAY PYROLYSED Bi2S3 THIN FILMS
    Rajalakshmi, P. Usha
    Oommen, Rachel
    Sanjeeviraja, C.
    CHALCOGENIDE LETTERS, 2011, 8 (10): : 649 - 657
  • [24] In situ synthesis of Bi/Bi2S3 heteronanowires with nonlinear electrical transport
    Huang, Xiaohu
    Yang, Youwen
    Dou, Xincun
    Zhu, Yonggang
    Li, Guanghai
    Journal of Alloys and Compounds, 2008, 461 (1-2): : 427 - 431
  • [25] Effect of Bi2S3 reaction concentration on the photoelectric properties of TiO2/Bi2S3 composite film
    Zhu, Di
    Li, Xinli
    Chen, Yongchao
    Deng, Yafeng
    Chen, Dao
    Wang, Yuwan
    Ren, Fengzhang
    MATERIALS RESEARCH EXPRESS, 2019, 6 (09):
  • [26] In situ synthesis of Bi/Bi2S3 heteronanowires with nonlinear electrical transport
    Huang, Xiaohu
    Yang, Youwen
    Dou, Xincun
    Zhu, Yonggang
    Li, Guanghai
    JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 461 (1-2) : 427 - 431
  • [27] Influence of gamma irradiation on structural, optical, and electrical characterization of Bi2S3 thin films
    Mansoor Ali, Syed
    Aldawood, S.
    AlGarawi, M. S.
    AlGhamdi, S. S.
    Kassim, H.
    Aziz, A.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (24) : 18982 - 18990
  • [28] Influence of gamma irradiation on structural, optical, and electrical characterization of Bi2S3 thin films
    Syed Mansoor Ali
    S. Aldawood
    M. S. AlGarawi
    S. S. AlGhamdi
    H. Kassim
    A. Aziz
    Journal of Materials Science: Materials in Electronics, 2022, 33 : 18982 - 18990
  • [29] Transport Properties of Bi2S3 Single Crystals
    Shaban, H. T.
    Nassary, M. M.
    El-Sadek, M. S.
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2008, 24 (05) : 757 - 760
  • [30] PHOTOELECTROCHEMICAL PROPERTIES OF ANODIC BI2S3 FILMS
    PETER, LM
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1979, 98 (01): : 49 - 58
12345