High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices

被引：102

作者：

Kumar, R. Krishna ^{[1
,2
,3
]}

Chen, X. ^{[2
]}

Auton, G. H. ^{[2
]}

Mishchenko, A. ^{[1
]}

Bandurin, D. A. ^{[1
]}

Morozov, S. V. ^{[4
,5
]}

Cao, Y. ^{[2
]}

Khestanova, E. ^{[1
]}

Ben Shalom, M. ^{[1
]}

Kretinin, A. V. ^{[2
,6
]}

Novoselov, K. S. ^{[2
]}

Eaves, L. ^{[2
,7
]}

Grigorieva, I. V. ^{[1
]}

Ponomarenko, L. A. ^{[3
]}

Fal'ko, V. I. ^{[1
,2
]}

Geim, A. K. ^{[1
,2
]}

机构：

[1] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Natl Graphene Inst, Manchester M13 9PL, Lancs, England

[3] Univ Lancaster, Dept Phys, Lancaster LA1 4YW, England

[4] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Russia

[5] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia

[6] Univ Manchester, Sch Mat, Manchester M13 9PL, Lancs, England

[7] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

SCIENCE | 2017年 / 357卷 / 6347期

基金：

欧洲研究理事会; 英国工程与自然科学研究理事会; 俄罗斯科学基金会;

关键词：

DIRAC FERMIONS; ELECTRONS;

D O I：

10.1126/science.aal3357

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-oscillatory behavior in their properties. Cryogenic temperatures are usually required to observe these oscillations. We show that graphene superlattices support a different type of quantum oscillation that does not rely on Landau quantization. The oscillations are extremely robust and persist well above room temperature in magnetic fields of only a few tesla. We attribute this phenomenon to repetitive changes in the electronic structure of superlattices such that charge carriers experience effectively no magnetic field at simple fractions of the flux quantum per superlattice unit cell. Our work hints at unexplored physics in Hofstadter butterfly systems at high temperatures.

引用

页码：181 / 184

页数：4

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