Temperature and doping dependence of spin relaxation in n-InAs -: art. no. 085346

被引：37

作者：

Murdin, BN ^{[1
]}

Litvinenko, K

Allam, J

Pidgeon, CR

Bird, M

Morrison, K

Zhang, T

Clowes, SK

Branford, WR

Harris, J

Cohen, LF

机构：

[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[2] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland

[3] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BZ, England

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevB.72.085346

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used time-resolved spectroscopy to measure the relaxation of spin polarizations in the narrow gap semiconductor material n-InAs as a function of temperature, doping, and pump wavelength. The results are consistent with the D'Yakonov-Perel mechanism for temperatures between 77 and 300 K. However, the data suggest that electron-electron scattering should be taken into account in determining the dependence of the spin lifetime on the carrier concentration in the range 5.2x10(16)-8.8x10(17) cm(-3). For a sample with doping of 1.22x10(17) cm(-3) the spin lifetime was 24 ps at room temperature. By applying a magnetic field in the sample plane we also observed coherent precession of the spins in the time domain, with a g factor g(*)=-13, also at room temperature.

引用

页数：5

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