Back surface band gap gradings in Cu(In,Ga)Se2 solar cells

被引：126

作者：

Dullweber, T

Lundberg, O

Malmström, J

Bodegård, M

Stolt, L

Rau, U

Schock, HW

Werner, JH

机构：

[1] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany

[2] Uppsala Univ, Angstrom Solar Ctr, SE-75121 Uppsala, Sweden

来源：

THIN SOLID FILMS | 2001年 / 387卷 / 1-2期

关键词：

band gap grading; recombination; back contact; CIGS; Cu(In; Ga)Se-2;

D O I：

10.1016/S0040-6090(00)01726-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricate and analyse Cu(In,Ga)Se-2-based solar cells which have a graded band gap by an increased Ga content towards the Mo back contact. The open circuit voltage and the short circuit current strongly improve with the band gap grading. Electronic device analysis reveals that the open circuit voltage increase is directly related to the increased band gap energy at the back surface. We interpret the obtained results to a large extent as reduced back contact recombination by the introduction of an increased band gap close to the back contact. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：11 / 13

页数：3

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