Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range

被引：22

作者：

Rodriguez, JB ^{[1
]}

Christol, P ^{[1
]}

Ouvrard, A ^{[1
]}

Chevrier, F ^{[1
]}

Grech, P ^{[1
]}

Joullié, A ^{[1
]}

机构：

[1] Univ Montpellier 2, CEM2, UMR 5507, CNRS, F-34095 Montpellier, France

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 06期

关键词：

D O I：

10.1049/el:20058045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A p-i-n superlattice photovoltaic detector is presented, operating uncooled in the 3-5 pm mid-wavelength infrared region. The active zone of the detector device, grown by molecular beam epitaxy on p-type GaSb substrate, is made of 150 periods of strain compensated InAs/InSb/GaSb (10/1/10 monolayers) superlattice (SL). The SL detector exhibited at 293K a cutoff wavelength of 5.9 mu m, an absorption coefficient of 5 x 10(3) cm(-1) and a responsivity of 0.7 mA/W at 3.5 mu m.

引用

页码：362 / 363

页数：2

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