Stacking Growth of In-Plane InAs Quantum-Dot Superlattices on GaAsSb/GaAs(001) for Solar Cell Applications

被引：2
|
作者：
Inaji, Toshihiko [1 ]
Ohta, Jun [1 ]
Yamaguchi, Koichi [1 ]
机构：
[1] Univ Electrocommun, Dept Elect Engn, Tokyo, Japan
来源：
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年
关键词：
D O I：
10.1109/PVSC.2010.5616259
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Self-assembled InAs quantum dots(QDs) were grown on GaAsSb/GaAs(001) layer by solid-source molecular beam epitaxy (MBE) using Stranski-Krastanov (SK) mode. High dot density of about 4 x 10(11) cm(-2) was demonstrated on the GaAsSb/GaAs buffer layer. In spite of high dot density, coalescence of neighboring dots was effectively suppressed on the GaAsSb surface. PL spectra shifted toward high energy side, as the excitation power increased high energy side. It suggests that these ultra-high density QDs form in-plane QD superlattice structure. The Sb-mediated growth method is a promising way to fabricate ultra-high density QD structures on the GaAs(001) substrates for solar cell applications.
引用
收藏
页码：1885 / 1888
页数：4
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