Tensile strength and fracture mechanics of two-dimensional nanocrystalline silicon carbide

被引:12
|
作者
Chowdhury, Emdadul Haque [1 ]
Rahman, Md. Habibur [1 ]
Hong, Sungwook [2 ]
机构
[1] Bangladesh Univ Engn & Technol, Dept Mech Engn, Dhaka 1000, Bangladesh
[2] Calif State Univ, Dept Phys & Engn, Bakersfield, CA 93311 USA
关键词
Molecular dynamics simulations; Nanocrystalline SiC; Inverse pseudo hall-petch relation; Mechanical strength; Grain size; MOLECULAR-DYNAMICS SIMULATIONS; POLYCRYSTALLINE GRAPHENE; GRAIN-BOUNDARIES; BORON-NITRIDE; SIC SHEETS; MONOLAYER; SIZE; BN; CONSTRUCTION; NANORIBBONS;
D O I
10.1016/j.commatsci.2021.110580
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional Silicon Carbide (SiC) has opened the route to a cornucopia of advanced functionalities in the realm of quantum condensed matter. It holds great promise for highly efficient nanoelectronic, optoelectronic, renewable energy, and spintronic applications thanks to the confluence of a wide spectrum of mesmerizing physical properties like a wide direct bandgap with high exciton binding energy, robust spin-orbit-coupling, excellent photoluminescence, suitable mechanical strength, and thermodynamic stability. Nonetheless, it is still a daunting challenge to incorporate SiC in functional systems since extensive analyses of the mechanical properties, and fracture mechanism of nanocrystalline (NC)-SiC is still obscure. In this light, this work is an attempt to report detailed information concerning the room-temperature tensile mechanical properties and fracture phenomena of NC-SiC executing Molecular Dynamics (MD) simulations. In particular, effects of grain size on the stress-strain profile, fracture strength, fracture strain, and Young's modulus of the NC-SiC have been thoroughly investigated. It has been found that the strength as a function of grain size can be characterized by the inverse pseudo Hall-Petch relation. Increasing grain size brings about more elasticity in the structure, albeit at the price of fracture strain. The NC-SiC encounters a substantial degradation in mechanical properties relative to its singlecrystal counterpart. Afterward, we performed an exhaustive fracture analysis on two NC-SiC samples of different grain sizes. The single-crystal SiC can endure more tensile strain before rupture compared to that of the NC-SiC. At last, the nanosheet exhibits more immunity to fracture with decreasing grain size. This study would lay the groundwork for NC-SiC to be successfully realized in functional systems as well as serving as a solid roadmap for engineering the mechanical properties of nanocrystalline materials.
引用
收藏
页数:8
相关论文
共 50 条
  • [31] Temperature- and Defect-Induced Uniaxial Tensile Mechanical Behaviors and the Fracture Mechanism of Two-Dimensional Silicon Germanide
    Islam, A. S. M. Jannatul
    Akbar, Md Shahadat
    Islam, Md Sherajul
    Park, Jeongwon
    ACS OMEGA, 2021, 6 (34): : 21861 - 21871
  • [32] Reaction sintering of two-dimensional silicon carbide fiber-reinforced silicon carbide composite by sheet stacking method
    Yoshida, Katsumi
    Mukai, Hideki
    Imai, Masamitsu
    Hashimoto, Kazuaki
    Toda, Yoshitomo
    Hyuga, Hideki
    Kondo, Naoki
    Kita, Hideki
    Yano, Toyohiko
    JOURNAL OF NUCLEAR MATERIALS, 2007, 367 : 769 - 773
  • [33] STRENGTH AND FRACTURE PROPERTIES OF SILICON-CARBIDE FILAMENT
    CRANE, RL
    KRUKONIS, VJ
    AMERICAN CERAMIC SOCIETY BULLETIN, 1975, 54 (02): : 184 - 188
  • [34] Two-dimensional heterogeneous lattice model simulation of tensile fracture in Dahurian Larch
    Zhao, Jian
    Zhao, Dong
    MATERIALS RESEARCH INNOVATIONS, 2015, 19 : 941 - 947
  • [35] Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots
    Ishikawa, Tetsuya
    Nikaido, Hiroki
    Usami, Koichi
    Uchida, Ken
    Oda, Shunri
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (12)
  • [36] Fatigue strength and fracture mechanisms of porous silicon carbide
    Yonezu, A.
    Ogawa, T.
    Kawamoto, H.
    Zairyo/Journal of the Society of Materials Science, Japan, 2001, 50 (01) : 13 - 18
  • [37] Spin–orbit coupling effects on the electronic structure of two-dimensional silicon carbide
    Md. Rasidul Islam
    Md. Sherajul Islam
    Naim Ferdous
    Khalid N. Anindya
    Akihiro Hashimoto
    Journal of Computational Electronics, 2019, 18 : 407 - 414
  • [38] Vacancy-related color centers in two-dimensional silicon carbide monolayers
    Mohseni, M.
    Sarsari, I. Abdolhosseini
    Karbasizadeh, S.
    Udvarhelyi, Peter
    Hassanzada, Q.
    Ala-Nissila, T.
    Gali, A.
    PHYSICAL REVIEW MATERIALS, 2024, 8 (05):
  • [39] Mechanical properties of various two-dimensional silicon carbide sheets: An atomistic study
    Danh-Truong Nguyen
    Minh-Quy Le
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 98 : 102 - 115
  • [40] Ab initio study of electronic and optical behavior of two-dimensional silicon carbide
    Lin, Xiao
    Lin, Shisheng
    Xu, Yang
    Hakro, Ayaz Ali
    Hasan, Tawfique
    Zhang, Baile
    Yu, Bin
    Luo, Jikui
    Li, Erping
    Chen, Hongsheng
    JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (11) : 2131 - 2135