Enhancement of Electrical properties of BiFeO3 multiferroic material by co-doping

In the present investigation, we have synthesized Bi(0.5)La(0.5)Mn(0.5)Fe(0.5-x)AlxO(3)(At x=0 and x=0.1) by solid state route. X-ray diffraction, room temperature Raman analysis and dielectric measurements are performed on Al-doped Bi0.5La0.5Fe0.5Mn0.5O3. X-ray diffraction analysis confirms the systems crystallize in orthorhombic phase with Pnma space group. Observed Raman modes also support the XRD outcomes. Dielectric studies on Bi0.5La0.5Fe0.5Mn0.40Al0.1O3 indicates that epsilon' increases sharply and shows high dielectric constant with weak-temperature dependence. Dielectric constant of the system enhances sharply from similar to 8.5x10(3) for Bi0.5La0.5Fe0.5Mn0.5O3 to similar to 1x10(4) for Bi0.5La0.5Fe0.5Mn0.40Al0.10O3 at room temperature. All the results suggest that Bi0.5La0.5Fe0.5Mn0.40Al0.10O3 is very promising for device applications in the field of spintronics, memory devices, high energy density capacitors etc.