共 50 条
- [42] Phase Engineering of Tin Sulphide Grown by Atmospheric Pressure Chemical Vapour Deposition at Ambient Temperature 2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2017,
- [45] Effect of boron-doping on the growth rate of atmospheric pressure chemical vapour deposition of Si J Cryst Growth, 1-2 (53-59):
- [46] Growth mode and kinetics of atmospheric pressure chemical vapour deposition of β-SiC on Si(100) substrate SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 227 - 230