Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

被引：8
|
作者：
Jo, Masafumi [1 ]
Duan, Guotao [1 ]
Mano, Takaaki [1 ]
Sakoda, Kazuaki [1 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
来源：
NANOSCALE RESEARCH LETTERS | 2011年 / 6卷
基金：
日本学术振兴会;
关键词：
MOLECULAR-BEAM EPITAXY; DROPLET EPITAXY; HOLED NANOSTRUCTURES; GAAS; GROWTH; SUBSTRATE; MBE;
D O I：
10.1186/1556-276X-6-76
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study the effects of low-temperature capping (200-450 degrees C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200 degrees C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350 degrees C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200 degrees C-capped sample.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] Effects of magnetic field on the terahertz nonlinear optical properties in donor-doped GaAs/AlGaAs quantum wells
    Yildirim, Hasan
    Aslan, Bulent
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2012, 249 (11): : 2207 - 2212
  • [32] Effects of magnetic, electric, and intense laser fields on the optical properties of AlGaAs/GaAs quantum wells for terahertz photodetectors
    AL-Naghmaish, Aishah
    Dakhlaoui, Hassen
    Ghrib, Taher
    Wong, Bryan M.
    PHYSICA B-CONDENSED MATTER, 2022, 635
  • [33] Optical characterization of InGaAs quantum wells after InP-GaAs low-temperature wafer bonding
    Onishi, Yutaka
    Koyama, Fumio
    1600, Japan Society of Applied Physics (41):
  • [34] Optical characterization of InGaAs quantum wells after InP-GaAs low-temperature wafer bonding
    Onishi, Y
    Koyama, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (6B): : L669 - L671
  • [35] AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots
    Cisneros Tamayo, R.
    Polupan, G.
    Torchynska, T., V
    Vega-Macotela, L. G.
    Stintz, A.
    Escobosa Echavarria, A.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 90 (212-218) : 212 - 218
  • [36] THERMALLY INDUCED OPTICAL BISTABILITY AT ROOM TEMPERATURE IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS.
    Miller, A.
    Steward, G.
    Blood, P.
    Woodbridge, K.
    Optica Acta, 1985, 33 (04): : 387 - 396
  • [37] Influence of low-temperature chemical vapor deposited SiO2 capping layer porosity on GaAs/AlGaAs quantum well intermixing
    Deenapanray, PNK
    Tan, HH
    Fu, L
    Jagadish, C
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2000, 3 (04) : 196 - 199
  • [38] GAAS/ALGAAS QUANTUM-WELLS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY WITH ATOMIC-HYDROGEN IRRADIATION
    OKADA, Y
    OHTA, S
    FUJITA, T
    KAWABE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 759 - 762
  • [39] FLUCTUATIONS OF A WIDTH OF QUANTUM WELLS AND LOW-TEMPERATURE PHOTOLUMINESCENCE OF GAAS/ALGAAS QUANTUM-DIMENSIONAL STRUCTURES, OBTAINED BY THE MOS-HYDRIDE METHOD
    MASHEVSKII, AG
    SINITSYN, MA
    STROGANOV, DR
    FEDOROVA, OM
    YAVICH, BS
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1988, 14 (13): : 1217 - 1220
  • [40] Sharp exciton photoluminescence in low-temperature-grown GaAs/AlGaAs multiple quantum wells
    Guo, LW
    Han, YJ
    Bao, CL
    Dai, DY
    Huang, Q
    Zhou, JM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6A): : 3762 - 3765
12345