Crossbar Switch Matrix for Floating-Gate Programming Over Large Current Ranges

被引：0

作者：

Degnan, Brian P. ^{[1
]}

Duffy, Christopher J. ^{[1
]}

Hasler, Paul E. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS | 2010年

关键词：

INJECTION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A floating-gate, cross-bar switch matrix with a novel programming method is presented. Single-polysilicon floating-gate transistors are used to hold a "bit" state programmed with short-channel pFET devices that demonstrate hot-electorn injection over a large current range. Hot-electron injection modeling in pFETs is contrasted across various channel lengths and bias currents. Circuit design and physical layout are discussed, and characterization data is presented from a matrix fabricated in a 0.5 mu m, scalable CMOS process available through MOSIS.

引用

页码：861 / 864

页数：4

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