Synthesis and characterization of Et2NM{OB[OSi(OtBu)3]2}3 (M = Zr, Hf) molecular precursors to Zr/B/Si/O and Hf/B/Si/O materials

被引：2
|
作者：
Fujdala, KL
Tilley, TD [1 ]
机构：
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Lab, Div Chem Sci, Berkeley, CA USA
来源：
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE | 2005年 / 631卷 / 13-14期
关键词：
zirconium; hafnium; oxide materials; siloxide; borosiloxide; precursor;
D O I：
10.1002/zaac.200500128
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Two new transition metal complexes containing the -OB[OSi(O'Bu)(3)](2) ligand, Et2NM{OB[OSi(O'Bu)(3)](2)}(2) (M = Zr, Hf), are reported. These species are the 4(th) and 5(th) examples of complexes containing this recently reported borosiloxide ligand. Their use as potential molecular precursors to multi-component oxide materials via the thermolytic molecular precursor (TMP) method is discussed.
引用
收藏
页码：2619 / 2622
页数：4
相关论文
共 50 条
  • [41] Different Carbonate Isomers Formed by the Addition of CO2 to M3O6- for M = Ti, Zr, and Hf
    Hu, Yiqin
    Persaud, Rudradatt R.
    Vasiliu, Monica
    Dixon, David A.
    JOURNAL OF PHYSICAL CHEMISTRY A, 2020, 124 (26): : 5402 - 5407
  • [42] NEW TERNARY TRANSITION-METAL SILICIDES AND GERMANIDES OF FE2P TYPE - ZR3CU4SI2, ZR3CU4GE2, HF3CU4SI2 AND HF3CU4GE2
    SPRENGER, H
    NICKL, JJ
    JOURNAL OF THE LESS-COMMON METALS, 1972, 27 (02): : 163 - &
  • [43] Ferroelectric Hf0.5Zr0.5O2 films on SrTiO3(111)
    Song, Tingfeng
    Estandia, Saul
    Dix, Nico
    Gazquez, Jaume
    Gich, Marti
    Fina, Ignasi
    Sanchez, Florencio
    JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (21) : 8407 - 8413
  • [44] SYNTHESIS AND PROPERTIES OF M4ZR3O12 AND M4HF3O12 COMPOUNDS (M-RARE-EARTH ELEMENT)
    LOPATO, LM
    REDKO, VP
    GERASIMYUK, GI
    SHEVCHENKO, AV
    INORGANIC MATERIALS, 1991, 27 (08) : 1445 - 1449
  • [45] The Thermoresponsive Phase Behaviour of CuSICON: CuM2P3O12 [M = Ti, Zr, Sn & Hf].
    Forbes, Roy P.
    Billing, David G.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2010, 66 : S159 - S160
  • [46] PHASE-FORMING IN MO2-SO3-KF-H2O SYSTEMS, WHERE (M=TI, M=ZR, M=HF)
    GODNEVA, MM
    MOTOV, DL
    ZHURNAL NEORGANICHESKOI KHIMII, 1991, 36 (01): : 257 - 262
  • [47] The Investigation of Reduced Variation Effectin FinFETs With Ultrathin 3-nm Ferroelectric Hf0.5Zr0.5O2
    Zhang, Fan
    Zhang, Zhaohao
    Yao, Jiaxin
    Zhu, Xiaohui
    Peng, Yue
    Huo, Jiali
    Zhang, Qingzhu
    Xu, Gaobo
    Wu, Zhenhua
    Han, Genquan
    Liu, Yan
    Yin, Huaxiang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (05) : 2876 - 2880
  • [48] Atomic-level Analysis by Synchrotron Radiation and Characterization of 2 nm, 3 nm, and 5 nm-thick Hf0.5Zr0.5O2 Negative Capacitance FinFET
    Tsai, Meng-Ju
    Chen, Pin-Jui
    Peng, Po-Yang
    Hou, Fu-Ju
    Wu, Yung-Chun
    2019 SILICON NANOELECTRONICS WORKSHOP (SNW), 2019, : 101 - 102
  • [49] Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance
    Lyu, Jike
    Fina, Ignasi
    Fontcuberta, Josep
    Sanchez, Florencio
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (06) : 6224 - 6229
  • [50] Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2
    Jia, Xinpei
    Chai, Junshuai
    Duan, Jiahui
    Sun, Xiaoqing
    Shao, Xianzhou
    Xiang, Jinjuan
    Han, Kai
    Wang, Yanrong
    Xu, Hao
    Wang, Xiaolei
    Zhang, Jing
    Wang, Wenwu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) : 1845 - 1851
12345