Thermally activated spectroscopy of optical absorption in Bi12SiO20 crystals

被引：3
|
作者：
Panchenko, T. [1 ]
Karpova, L. [2 ]
机构：
[1] O Honchar Dnipro Natl Univ, 72 Gagarin Ave, UA-49010 Dnipro, Ukraine
[2] Ukrainian State Univ Chem Technol, 8 Gagarin Ave, UA-49010 Dnipro, Ukraine
来源：
UKRAINIAN JOURNAL OF PHYSICAL OPTICS | 2020年 / 21卷 / 02期
关键词：
Bi12SiO20; crystals; Al; Ga and Cr impurities; photo-induced absorption; temperature dependences; AL; MN; GA; CR;
D O I：
10.3116/16091833/21/2/84/2020
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We suggest applying a method of thermally activated spectroscopy to the problem of impurity optical absorption. The method consists in measuring the temperature dependence of optical absorption in a wide-gap semiconductor crystal and analyzing the temperature derivative of this dependence. The above technique allows for determining the energies of thermal and optical activations and the strength of electron-phonon interaction for the impurity centres.
引用
收藏
页码：84 / 92
页数：9
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