Thermally activated spectroscopy of optical absorption in Bi12SiO20 crystals

被引：3

作者：

Panchenko, T. ^{[1
]}

Karpova, L. ^{[2
]}

机构：

[1] O Honchar Dnipro Natl Univ, 72 Gagarin Ave, UA-49010 Dnipro, Ukraine

[2] Ukrainian State Univ Chem Technol, 8 Gagarin Ave, UA-49010 Dnipro, Ukraine

来源：

UKRAINIAN JOURNAL OF PHYSICAL OPTICS | 2020年 / 21卷 / 02期

关键词：

Bi12SiO20; crystals; Al; Ga and Cr impurities; photo-induced absorption; temperature dependences; AL; MN; GA; CR;

D O I：

10.3116/16091833/21/2/84/2020

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We suggest applying a method of thermally activated spectroscopy to the problem of impurity optical absorption. The method consists in measuring the temperature dependence of optical absorption in a wide-gap semiconductor crystal and analyzing the temperature derivative of this dependence. The above technique allows for determining the energies of thermal and optical activations and the strength of electron-phonon interaction for the impurity centres.

引用

页码：84 / 92

页数：9

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