Influence of post-annealing on the properties of Ta-doped In2O3 transparent conductive films

被引：11

作者：

Xu Lei ^{[1
,2
]}

Wang Rui ^{[1
,2
]}

Liu Yong ^{[1
]}

Zhang Dan ^{[1
]}

Xiao Qi ^{[1
]}

机构：

[1] Tianjin Polytech Univ, Key Lab Composite Mat, Tianjin 300160, Peoples R China

[2] Tianjin Polytech Univ, Sch Text, Tianjin 300160, Peoples R China

来源：

CHINESE SCIENCE BULLETIN | 2011年 / 56卷 / 15期

基金：

中国国家自然科学基金;

关键词：

transparent conductive films; transparent semiconductors; Hall measurement; optical bandgap; radio-frequency sputtering; ZNO THIN-FILMS; ZINC-OXIDE FILMS; ELECTRICAL-PROPERTIES; RF; GROWTH;

D O I：

10.1007/s11434-011-4450-y

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Ta-doped In2O3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300A degrees C. The influence of post-annealing on the structural, morphologic, electrical and optical properties of the films was investigated using X-ray diffraction, field emission scanning electron microscopy, Hall measurements and optical transmission spectroscopy. The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction. The lowest resistivity, 5.1x10(-4) Omega cm, was obtained in the film annealed at 500A degrees C, which is half of that of the un-annealed film (9.9x10(-4) Omega cm). The average optical transmittance of the films was over 90%. The optical bandgap was found to decrease with increasing annealing temperature.

引用

页码：1535 / 1538

页数：4

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