Influence of post-annealing on the properties of Ta-doped In2O3 transparent conductive films

被引：11
|
作者：
Xu Lei [1 ,2 ]
Wang Rui [1 ,2 ]
Liu Yong [1 ]
Zhang Dan [1 ]
Xiao Qi [1 ]
机构：
[1] Tianjin Polytech Univ, Key Lab Composite Mat, Tianjin 300160, Peoples R China
[2] Tianjin Polytech Univ, Sch Text, Tianjin 300160, Peoples R China
来源：
CHINESE SCIENCE BULLETIN | 2011年 / 56卷 / 15期
基金：
中国国家自然科学基金;
关键词：
transparent conductive films; transparent semiconductors; Hall measurement; optical bandgap; radio-frequency sputtering; ZNO THIN-FILMS; ZINC-OXIDE FILMS; ELECTRICAL-PROPERTIES; RF; GROWTH;
D O I：
10.1007/s11434-011-4450-y
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Ta-doped In2O3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300A degrees C. The influence of post-annealing on the structural, morphologic, electrical and optical properties of the films was investigated using X-ray diffraction, field emission scanning electron microscopy, Hall measurements and optical transmission spectroscopy. The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction. The lowest resistivity, 5.1x10(-4) Omega cm, was obtained in the film annealed at 500A degrees C, which is half of that of the un-annealed film (9.9x10(-4) Omega cm). The average optical transmittance of the films was over 90%. The optical bandgap was found to decrease with increasing annealing temperature.
引用
收藏
页码：1535 / 1538
页数：4
相关论文
共 50 条
  • [1] Influence of post-annealing on the properties of Ta-doped In2O3 transparent conductive films
    XU Lei 1
    2 School of Textiles
    Science Bulletin, 2011, (15) : 1535 - 1538
  • [2] Post-annealing on the Electrical Properties of Ta-doped In2O3 Transparent Conductive Films
    Xu Lei
    Wang Rui
    Xiao Qi
    NEW TRENDS IN MECHANICAL ENGINEERING AND MATERIALS, 2013, 251 : 387 - 391
  • [3] Influence of Post-Annealing Temperature on Properties of Ta-Doped ZnO Transparent Conductive Films
    Cao Feng
    Wang Yi-Ding
    Yin Jing-Zhi
    Cong Meng-Long
    Han Liang-Yu
    CHINESE PHYSICS LETTERS, 2009, 26 (11)
  • [4] Ta-doped In2O3 transparent conductive films with high transmittance and low resistance
    Wang, Biao
    Hu, LiMing
    Liu, FengMin
    Qin, Li
    Liu, Yun
    Wang, LiJun
    OPTICA APPLICATA, 2010, 40 (01) : 25 - 31
  • [5] Low-resistivity sputtered films of transparent conducting Ta-doped In2O3 oxide
    Moon, J
    Shin, Y
    Kang, K
    Park, SH
    Ju, H
    Jeong, CO
    Park, C
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (01) : 148 - 151
  • [6] Annealing Effect of Pulsed Laser Deposited Transparent Conductive Ta-Doped Titanium Oxide Films
    Wu Bin-Bin
    Pan Feng-Ming
    Yang Yu-E
    CHINESE PHYSICS LETTERS, 2011, 28 (11)
  • [7] Influence of post-annealing on the properties of Sc-doped ZnO transparent conductive films deposited by radio-frequency sputtering
    Liu, Xueqiang
    Bi, Weihong
    Liu, Zhaolun
    APPLIED SURFACE SCIENCE, 2009, 255 (18) : 7942 - 7945
  • [8] The influence of post-annealing treatment on the electrical properties of In2O3 thin films prepared by an ultrasonic spray CVD process
    Girtan, M
    SURFACE & COATINGS TECHNOLOGY, 2004, 184 (2-3): : 219 - 224
  • [9] Growth and vacuum post-annealing effect on the structural, electrical and optical properties of Sn-doped In2O3 thin films
    Vilca-Huayhua, C. A.
    Paz-Corrales, K. J.
    Aragon, F. F. H.
    Mathpal, M. C.
    Villegas-Lelovsky, L.
    Coaquira, J. A. H.
    Pacheco-Salazar, D. G.
    THIN SOLID FILMS, 2020, 709
  • [10] High mobility titanium-doped In2O3 thin films prepared by sputtering/post-annealing technique
    Hashimoto, Ryota
    Abe, Yoshiyuki
    Nakada, Tokio
    APPLIED PHYSICS EXPRESS, 2008, 1 (01)
12345