Observation of V defects in multiple InGaN/GaN quantum well layers

被引：15
|
作者：
Tsai, Hung-Ling
Wang, Ting-Yu
Yang, Jer-Ren [1 ]
Chuo, Chang-Cheng
Hsu, Jung-Tsung
Feng, Zhe-Chuan
Shiojiri, Makoto
机构：
[1] Natl Taiwan Univ, Inst Mat Sci & Engn, Taipei 106, Taiwan
[2] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu, Taiwan
[3] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 106, Taiwan
[4] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
[5] Kyoto Inst Technol, Kyoto 6068585, Japan
来源：
MATERIALS TRANSACTIONS | 2007年 / 48卷 / 05期
关键词：
inverted hexagonal pyramid defect; V defect; green laser diode; multiple indium gallium nitride/gallium nitride quantum wells; high-angle annular dark-field scanning transmission electron microscopy; transmission electron microscopy;
D O I：
10.2320/matertrans.48.894
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Multiple In(0.18)Ga(0.8)2N (4 nm)/GaN (40 nm) quantum well (QW) layers in a green laser diode were observed by high-angle annular darkfield (HAADF) scanning transmission electron microscopy (STEM) and conventional transmission electron microscopy. HAADF-STEM provided undoubted evidence that V defects in the multiple QW have the thin six-walled structure with InGaN/GaN {10 (1) over bar1} layers. The detailed structure of the observed V defects is discussed on the basis of the formation mechanism of V defects which was proposed taking into account the growth kinetics of the GaN crystal and a masking effect of In atoms segregated around the threading dislocation (Shiojiri et al. J. Appl. Phys. 99,(2006)073505).
引用
收藏
页码：894 / 898
页数：5
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