High-low temperature performance of GaN 600 V Schottky rectifiers

被引：1

作者：

Naik, Harsh ^{[1
]}

Marron, Tom ^{[1
]}

Chow, T. Paul ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

关键词：

GaN; Schottky rectifier; cryogenic operation; Schottky barrier inhomogeneities;

D O I：

10.1002/pssc.201001089

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The performance of a 600 V gallium nitride Schottky rectifier at high temperatures up to 125 degrees C and cryogenic operation has been reported. A 600 V, 4 A GaN Schottky rectifier from Velox semiconductors has been used for the characterization. Forward conduction and reverse blocking performance was measured down to 77 K. Two Schottky barrier heights have been noticed at low temperatures and a tunnelling limited reverse leakage current was observed. The SPICE model parameters are also extracted for circuit simulation purposes. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2219 / 2222

页数：4

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