Single lateral mode mid-infrared laser diode using wavelength-scale modulation of the facet reflectivity

被引：12

作者：

Nash, G. R. ^{[1
]}

Stokes, J. L. ^{[2
]}

Pugh, J. R. ^{[2
]}

Przeslak, S. J. B. ^{[2
]}

Heard, P. J. ^{[3
]}

Rarity, J. G. ^{[2
]}

Cryan, M. J. ^{[2
]}

机构：

[1] Univ Exeter, Coll Engn Math & Phys Sci, Exeter EX4 4QF, Devon, England

[2] Univ Bristol, Dept Elect & Elect Engn, Bristol BS8 1UB, Avon, England

[3] Univ Bristol, Interface Anal Ctr, Bristol BS8 1UB, Avon, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

AREA SEMICONDUCTOR-LASERS; INSB;

D O I：

10.1063/1.3673824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of mid-infrared laser diodes have been investigated before and after the patterning of wavelength-scale metallic apertures on the emitting facet. Before modification of the facet, the emitted spectrum consisted of a large number of peaks associated with different spatial modes, whereas afterwards, the spectrum was dominated by a single peak. Simulations showed that the patterning of the facet caused the effective reflectivity to be different for each lateral mode, suggesting that the peak in the measured spectra is associated with the single lateral mode which is most strongly reflected from the modified facet. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673824]

引用

页数：3

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