Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures

被引：2
|
作者：
Zaitsev, S. V. [1 ]
Maksimov, A. A. [1 ]
Tartakovskii, I. I. [1 ]
Yakovlev, D. R. [2 ]
Waag, A. [3 ]
机构：
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Oblast, Russia
[2] Univ Dortmund, D-44227 Dortmund, Germany
[3] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany
来源：
SEMICONDUCTORS | 2008年 / 42卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782608050096
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In is shown that, at high densities of spatially separated electrons and holes in type-II ZnSe/BeTe heterostructures, the conditions for resonance tunneling of photoexcited holes from the ZnSe layer to the BeTe layer are attainable. Nonlinear behavior of the intensity of the photoluminescence band corresponding to spatially direct optical transitions with photoexcitation intensity is observed. Numerical calculations are carried out, and the results are in good agreement with the experimental data in a wide region of variation of the optical pumping intensity.
引用
收藏
页码：540 / 544
页数：5
相关论文
共 50 条
  • [31] Giant blue shift of photoluminescence in strongly excited type-II ZnSe/BeTe superlattices
    Zaitsev, S.V.
    Kulakovskii, V.D.
    Maksimov, A.A.
    Pronin, D.A.
    Tartakovskii, I.I.
    Gippius, N.A.
    Litz, M.Th.
    Fisher, F.
    Waag, A.
    Yakovlev, D.R.
    Ossau, W.
    Landwehr, G.
    JETP Letters (Translation of Pis'ma v Zhurnal Eksperimental'noi Teoreticheskoi Fiziki), 1997, 66 (05):
  • [32] Giant blue shift of photoluminescence in strongly excited type-II ZnSe/BeTe superlattices
    S. V. Zaitsev
    V. D. Kulakovskii
    A. A. Maksimov
    D. A. Pronin
    I. I. Tartakovskii
    N. A. Gippius
    M. Th. Litz
    F. Fisher
    A. Waag
    D. R. Yakovlev
    W. Ossau
    G. Landwehr
    Journal of Experimental and Theoretical Physics Letters, 1997, 66 : 376 - 381
  • [33] Giant blue shift of photoluminescence in strongly excited type-II ZnSe/BeTe superlattices
    Zaitsev, SV
    Kulakovskii, VD
    Maksimov, AA
    Pronin, DA
    Tartakovskii, II
    Gippius, NA
    Litz, MT
    Fisher, F
    Waag, A
    Yakovlev, DR
    Ossau, W
    Landwehr, G
    JETP LETTERS, 1997, 66 (05) : 376 - 381
  • [34] Interface properties and in-plane linear photoluminescence polarization in highly excited type-II ZnSe/BeTe heterostructures with equivalent and nonequivalent interfaces
    Zaitsev, SV
    Maksimov, AA
    Kulakovskii, VD
    Tartakovskii, II
    Yakovlev, DR
    Ossau, W
    Hansen, L
    Landwehr, G
    Waag, A
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (02) : 652 - 657
  • [35] INTERBAND MAGNETO-TUNNELING IN POLYTYPE TYPE-II HETEROSTRUCTURES
    MENDEZ, EE
    SURFACE SCIENCE, 1992, 267 (1-3) : 370 - 376
  • [36] Type-II interface exciton in ZnSe/(Zn,Mn)Se heterostructures
    Rossin, VV
    Bottger, T
    Henneberger, F
    PHYSICAL REVIEW B, 1996, 54 (11): : 7682 - 7685
  • [37] Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment
    Maksimov, AA
    Zaitsev, SV
    Tartakovskii, II
    Kulakovskii, VD
    Yakovlev, DR
    Ossau, W
    Keim, M
    Reuscher, G
    Waag, A
    Landwehr, G
    APPLIED PHYSICS LETTERS, 1999, 75 (09) : 1231 - 1233
  • [38] Optical property of modulated n-doped ZnSe/BeTe type-II quantum wells
    Zi-Wu, Ji
    Hirofumi, Mino
    Eiji, Kojima
    Ryoichi, Akimoto
    Shojiro, Takeyama
    ACTA PHYSICA SINICA, 2008, 57 (05) : 3260 - 3266
  • [39] Spatially direct charged exciton photoluminescence in undoped ZnSe/BeTe type-II quantum wells
    Ji, Z. W.
    Takeyama, S.
    Mino, H.
    Oto, K.
    Muro, K.
    Akimoto, R.
    APPLIED PHYSICS LETTERS, 2008, 92 (09)
  • [40] Interface structure effects on optical property of undoped ZnSe/BeTe type-II quantum wells
    Ji Zi-Wu
    Zheng Yu-Jun
    Xu Xian-Gang
    Lu Yun
    ACTA PHYSICA SINICA, 2010, 59 (11) : 7986 - 7990
12345