Comparative Review of the TiO2 and the Spintronic Memristor Devices

被引：0

作者：

Elshamy, Mohamed ^{[1
]}

Mostafa, Hassan ^{[1
,2
]}

Said, M. Sameh ^{[1
]}

机构：

[1] Cairo Univ, Elect & Commun Engn Dept, Giza 12613, Egypt

[2] AUC & Zewail City Sci & Technol, Ctr Nanoelect & Devices, New Cairo 11835, Egypt

来源：

2014 IEEE 27TH CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (CCECE) | 2014年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Memristor, has attracted increased attentions since the first real device was discovered by HP Labs in 2008. Its distinctive characteristic to store the historic state of the voltage/current through it creates great potentials in circuit design. Thus, many physical realization of the device have been introduced. In this work, a review of two of the most challenging physical realizations of the memristor is performed in light of what was predicted by Chua in 1971.

引用

页数：6

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